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By Eiji Usui; Seiki Gakkai (Japan); Chiba-ken (Japan); Chiba Industrial Technology Advancement Center

As we stream in the direction of the twenty first century, industries are forced to show from "high productiveness and excessive precision" to "more clever and extra human-oriented technology". This quantity offers the present state-of-the-art of production/precision engineering and illuminates components within which destiny paintings may perhaps continue.

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They include a brief review of the polishing mechanisms for metals, 'gentle'/ 'ductile' grinding and polishing of advanced ceramics and glasses, the nature of bonding in various classes of materials, work materials (silicon nitride and glasses) , abrasives, conventional polishing, advanced ceramics and glasses as work materials, and methods of finishing advanced ceramics. 2. POLI S H I N G MECHANISMS FOR METALS Polishing of metals and glasses has been of great interest for centuries in the production of optical components chiefly for mirror and lens applications.

K-38 ON TH E M EC H A N I S M S OF MATE R I A L R E MOVAL I N F I N E G R I N D I N G A N D POLI S H I NG OF A DVANCE D C E RAMICS A N D G LASSES R. Komanduri and T. R. A. This paper deals with the fundamental considerations on t he interactions between the abrasive and the work material as well as the micro-mechanisms of material removal and surface generation process in 'gentle' grinding and polishing (surface roughness in the range of a few nanometers rms) of advanced ceramics and glasses. In developing plausible mechanisms, an attempt is made to delineate the failure mechanisms operable in polycrystalline ceramics and glasses versus the metals.

Covalent bonding occurs when two or more atoms share electrons such that each achieves a stable octet. Unlike metallic or ionic bonds, covalent bonds are directional. Each covalent bond consists of a pair of electrons shared between two atoms which produces directionality of the bond. Bonding of carbon atoms in diamond is an example of classical 1 00 % covalent bond. Silicon carbide (90 %) and silicon nitride (75 %) have significant fractions of covalent bo nding while Si02 is 50 % ionic and 50 % covalent.

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